All MOSFET. WM03N06M Datasheet

 

WM03N06M MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM03N06M
   Marking Code: KM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 0.85 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT23

 WM03N06M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM03N06M Datasheet (PDF)

 ..1. Size:466K  way-on
 wm03n06m.pdf

WM03N06M WM03N06M

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

 8.1. Size:2401K  way-on
 wm03n01g.pdf

WM03N06M WM03N06M

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

 8.2. Size:810K  way-on
 wm03n09f.pdf

WM03N06M WM03N06M

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

 8.3. Size:351K  way-on
 wm03n01l.pdf

WM03N06M WM03N06M

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

 8.4. Size:466K  way-on
 wm03n01h.pdf

WM03N06M WM03N06M

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SSM3K123TU | BUK9Y12-100E | STU8NM50N | BUK436W-1000B

 

 
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