WM03N06M Datasheet and Replacement
Type Designator: WM03N06M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT23
WM03N06M substitution
WM03N06M Datasheet (PDF)
wm03n06m.pdf

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
wm03n01g.pdf

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
wm03n09f.pdf

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR
wm03n01l.pdf

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR
Datasheet: WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A , WM03DP50A , WM03N01G , WM03N01H , WM03N01L , CS150N03A8 , WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R .
History: R6524ENZ | STB200N4F3
Keywords - WM03N06M MOSFET datasheet
WM03N06M cross reference
WM03N06M equivalent finder
WM03N06M lookup
WM03N06M substitution
WM03N06M replacement
History: R6524ENZ | STB200N4F3



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