WM03N06M Specs and Replacement
Type Designator: WM03N06M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: SOT23
WM03N06M substitution
- MOSFET ⓘ Cross-Reference Search
WM03N06M datasheet
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS D R ... See More ⇒
wm03n01g.pdf
Document W0803083, Rev D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS D R ... See More ⇒
wm03n09f.pdf
WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS D R ... See More ⇒
wm03n01l.pdf
Document W0803102, Rev C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS D R ... See More ⇒
Detailed specifications: WM03DH34M3, WM03DH60A, WM03DN06D, WM03DN85A, WM03DP50A, WM03N01G, WM03N01H, WM03N01L, BS170, WM03N09F, WM03N115A, WM03N32M, WM03N57M, WM03N58M, WM03N58M2, WM03N86M2, WM03P115R
Keywords - WM03N06M MOSFET specs
WM03N06M cross reference
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