All MOSFET. WM03N06M Datasheet

 

WM03N06M Datasheet and Replacement


   Type Designator: WM03N06M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT23
 

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WM03N06M Datasheet (PDF)

 ..1. Size:466K  way-on
 wm03n06m.pdf pdf_icon

WM03N06M

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

 8.1. Size:2401K  way-on
 wm03n01g.pdf pdf_icon

WM03N06M

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

 8.2. Size:810K  way-on
 wm03n09f.pdf pdf_icon

WM03N06M

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

 8.3. Size:351K  way-on
 wm03n01l.pdf pdf_icon

WM03N06M

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

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Datasheet: WM03DH34M3 , WM03DH60A , WM03DN06D , WM03DN85A , WM03DP50A , WM03N01G , WM03N01H , WM03N01L , BS170 , WM03N09F , WM03N115A , WM03N32M , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R .

History: SSB60R099S2E | NTD5805NT4G

Keywords - WM03N06M MOSFET datasheet

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