WM03N09F Datasheet and Replacement
Type Designator: WM03N09F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.715 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.93 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1.2 nS
Cossⓘ - Output Capacitance: 8.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DFN1006-3L
- MOSFET Cross-Reference Search
WM03N09F Datasheet (PDF)
wm03n09f.pdf
WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR
wm03n01g.pdf
Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
wm03n01l.pdf
Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - WM03N09F MOSFET datasheet
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History: GSM3030 | IRF6612
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