STM105N Datasheet. Specs and Replacement

Type Designator: STM105N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: SOP8

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STM105N datasheet

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STM105N

Green Product STM105N a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 100V 6A 31 @ VGS=10V Suface Mount Package. SO-8 1 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Units Limit VDS Drai... See More ⇒

 9.1. Size:179K  samhop
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STM105N

Green Product STM101N a S mHop Microelectronics C orp. Ver1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 170 @ VGS=10V Suface Mount Package. 100V 3A 260 @ VGS=4.5V S O-8 1 C (TA=25 unless otherwise noted) ABSOLUTE MAXIMUM RATINGS Symbol Parameter ... See More ⇒

 9.2. Size:134K  samhop
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STM105N

G P P STM102D a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 216 @ VGS=10V 547 @ VGS=-10V 100V 2.0A -100V -1.3A 328 @ VGS=4.5V 614 @ VGS=-4.5V D2 5 4 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 D1 8 1 S 1 1 (TC=25 C unl... See More ⇒

Detailed specifications: FDP5N60NZ, STM122N, FDP61N20, STM121N, FDP65N06, FDP75N08A, FDP7N50, FDP7N60NZ, STP80NF70, FDP80N06, FDP8440, FDP8441, FDP8443F085, FDP8447L, FDP8860, STM102D, FDP8870

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.