All MOSFET. STM105N Datasheet

 

STM105N Datasheet and Replacement


   Type Designator: STM105N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SOP8
 

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STM105N Datasheet (PDF)

 ..1. Size:123K  samhop
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STM105N

GreenProduct STM105NaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.100V 6A 31 @ VGS=10VSuface Mount Package.SO-81ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)Symbol Parameter UnitsLimitVDS Drai

 9.1. Size:179K  samhop
stm101n.pdf pdf_icon

STM105N

GreenProduct STM101NaS mHop Microelectronics C orp.Ver1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.170 @ VGS=10VSuface Mount Package.100V 3A260 @ VGS=4.5VS O-81C(TA=25 unless otherwise noted)ABSOLUTE MAXIMUM RATINGSSymbol Parameter

 9.2. Size:134K  samhop
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STM105N

GPPSTM102DaS mHop Microelectronics C orp.Ver 1.0Dual Enhancement Mode Field Effect Transistor (N and P Channel)PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel)RDS(ON) (m) Max RDS(ON) (m) MaxVDSS ID VDSS ID216 @ VGS=10V 547 @ VGS=-10V100V 2.0A-100V -1.3A328 @ VGS=4.5V 614 @ VGS=-4.5VD2 5 4 G 26D2 3 S 2D1 7 2G 1SO-8D1 8 1S 11(TC=25C unl

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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Keywords - STM105N MOSFET datasheet

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