WM03N32M Datasheet and Replacement
Type Designator: WM03N32M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 43 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.047 Ohm
Package: SOT23
WM03N32M substitution
WM03N32M Datasheet (PDF)
wm03n32m.pdf
WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS DR
wm03n01g.pdf
Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
wm03n09f.pdf
WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR
Datasheet: WM03DN85A , WM03DP50A , WM03N01G , WM03N01H , WM03N01L , WM03N06M , WM03N09F , WM03N115A , IRF1407 , WM03N57M , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R , WM03P27M , WM03P41M , WM03P41M2 .
History: SSB60R099S2E | NTD5805NT4G
Keywords - WM03N32M MOSFET datasheet
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WM03N32M replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: SSB60R099S2E | NTD5805NT4G
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