All MOSFET. WM03N57M Datasheet

 

WM03N57M Datasheet and Replacement


   Type Designator: WM03N57M
   Marking Code: R4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9.8 nC
   tr ⓘ - Rise Time: 1.3 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: SOT23
 

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WM03N57M Datasheet (PDF)

 ..1. Size:467K  way-on
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WM03N57M

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR

 8.1. Size:480K  way-on
 wm03n58m.pdf pdf_icon

WM03N57M

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 8.2. Size:535K  way-on
 wm03n58m2.pdf pdf_icon

WM03N57M

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 9.1. Size:2401K  way-on
 wm03n01g.pdf pdf_icon

WM03N57M

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

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Datasheet: WM03DP50A , WM03N01G , WM03N01H , WM03N01L , WM03N06M , WM03N09F , WM03N115A , WM03N32M , 5N65 , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M .

History: SIHFIBE20G

Keywords - WM03N57M MOSFET datasheet

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