WM03N57M Datasheet and Replacement
Type Designator: WM03N57M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.3 nS
Cossⓘ - Output Capacitance: 72 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SOT23
WM03N57M substitution
WM03N57M Datasheet (PDF)
wm03n57m.pdf

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR
wm03n58m.pdf

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
wm03n58m2.pdf

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
wm03n01g.pdf

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
Datasheet: WM03DP50A , WM03N01G , WM03N01H , WM03N01L , WM03N06M , WM03N09F , WM03N115A , WM03N32M , 5N65 , WM03N58M , WM03N58M2 , WM03N86M2 , WM03P115R , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M .
Keywords - WM03N57M MOSFET datasheet
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