Справочник MOSFET. WM03N57M

 

WM03N57M MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WM03N57M
   Маркировка: R4
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 5.8 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 9.8 nC
   Время нарастания (tr): 1.3 ns
   Выходная емкость (Cd): 72 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.027 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для WM03N57M

 

 

WM03N57M Datasheet (PDF)

 ..1. Size:467K  way-on
wm03n57m.pdf

WM03N57M
WM03N57M

WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR

 8.1. Size:480K  way-on
wm03n58m.pdf

WM03N57M
WM03N57M

WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 8.2. Size:535K  way-on
wm03n58m2.pdf

WM03N57M
WM03N57M

WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR

 9.1. Size:2401K  way-on
wm03n01g.pdf

WM03N57M
WM03N57M

Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR

 9.2. Size:503K  way-on
wm03n32m.pdf

WM03N57M
WM03N57M

WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS DR

 9.3. Size:466K  way-on
wm03n06m.pdf

WM03N57M
WM03N57M

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

 9.4. Size:810K  way-on
wm03n09f.pdf

WM03N57M
WM03N57M

WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR

 9.5. Size:829K  way-on
wm03n86m2.pdf

WM03N57M
WM03N57M

WM03N86M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 8.6A DS DR

 9.6. Size:769K  way-on
wm03n115a.pdf

WM03N57M
WM03N57M

WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR

 9.7. Size:351K  way-on
wm03n01l.pdf

WM03N57M
WM03N57M

Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR

 9.8. Size:466K  way-on
wm03n01h.pdf

WM03N57M
WM03N57M

WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR

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