FDP80N06 Datasheet and Replacement
Type Designator: FDP80N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 57 nC
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220
FDP80N06 substitution
FDP80N06 Datasheet (PDF)
fdp80n06.pdf

September 2007UniFETTMFDP80N06tmN-Channel MOSFET60V, 80A, 10mFeatures Description RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge(Typ. 57nC)stripe, DMOS technology. Low Crss(Typ. 145pF)This advanced technology has been especially
fdp8030l fdb8030l.pdf

November 1999FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critic
fdp8030l fdb8030l.pdf

FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electrica
Datasheet: STM122N , FDP61N20 , STM121N , FDP65N06 , FDP75N08A , FDP7N50 , FDP7N60NZ , STM105N , P60NF06 , FDP8440 , FDP8441 , FDP8443F085 , FDP8447L , FDP8860 , STM102D , FDP8870 , STM101N .
Keywords - FDP80N06 MOSFET datasheet
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History: SFR9120 | RFP8N20L



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