FDP80N06 Datasheet. Specs and Replacement
Type Designator: FDP80N06 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO220
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FDP80N06 substitution
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FDP80N06 datasheet
fdp80n06.pdf
September 2007 UniFETTM FDP80N06 tm N-Channel MOSFET 60V, 80A, 10m Features Description RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge(Typ. 57nC) stripe, DMOS technology. Low Crss(Typ. 145pF) This advanced technology has been especially ... See More ⇒
fdp8030l fdb8030l.pdf
November 1999 FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critic... See More ⇒
fdp8030l fdb8030l.pdf
FDP8030L/FDB8030L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 V designed specifically to improve the overall efficiency of RDS(ON) = 0.0045 @ VGS = 4.5 V DC/DC converters using either synchronous or conventional switching PWM controllers. Critical DC electrica... See More ⇒
Detailed specifications: STM122N, FDP61N20, STM121N, FDP65N06, FDP75N08A, FDP7N50, FDP7N60NZ, STM105N, 5N60, FDP8440, FDP8441, FDP8443F085, FDP8447L, FDP8860, STM102D, FDP8870, STM101N
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