FDP80N06 Datasheet and Replacement. Cross Reference Search

FDP80N06 Datasheet (PDF)

..1. Size:453K fairchild semi
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September 2007UniFETTMFDP80N06tmN-Channel MOSFET60V, 80A, 10mFeatures Description RDS(on) = 8.5m ( Typ.)@ VGS = 10V, ID = 40A These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge(Typ. 57nC)stripe, DMOS technology. Low Crss(Typ. 145pF)This advanced technology has been especially

9.1. Size:60K fairchild semi
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November 1999FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critic

9.2. Size:282K onsemi
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FDP8030L/FDB8030LN-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic level MOSFET has been 80 A, 30 V. RDS(ON) = 0.0035 @ VGS = 10 Vdesigned specifically to improve the overall efficiency ofRDS(ON) = 0.0045 @ VGS = 4.5 VDC/DC converters using either synchronous orconventional switching PWM controllers. Critical DC electrica

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