WM03P60M2
MOSFET. Datasheet pdf. Equivalent
Type Designator: WM03P60M2
Marking Code: 30P6
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.1
nC
trⓘ - Rise Time: 40
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04
Ohm
Package:
SOT23
WM03P60M2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM03P60M2
Datasheet (PDF)
..1. Size:596K way-on
wm03p60m2.pdf 
WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR
9.1. Size:538K way-on
wm03p41m2.pdf
WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
9.2. Size:561K way-on
wm03p41m.pdf
WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
9.3. Size:751K way-on
wm03p91a.pdf
WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR
9.4. Size:500K way-on
wm03p27m.pdf
WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR
9.5. Size:538K way-on
wm03p42m2.pdf
WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR
9.6. Size:539K way-on
wm03p42m.pdf
WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR
9.7. Size:519K way-on
wm03p56m2.pdf
WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
9.8. Size:618K way-on
wm03p115r.pdf
WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR
9.9. Size:966K way-on
wm03p51a.pdf
WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR
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