WM03P60M2 Specs and Replacement
Type Designator: WM03P60M2
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOT23
WM03P60M2 substitution
- MOSFET ⓘ Cross-Reference Search
WM03P60M2 datasheet
wm03p41m2.pdf
WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS D R ... See More ⇒
wm03p41m.pdf
WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS D R ... See More ⇒
Detailed specifications: WM03P115R, WM03P27M, WM03P41M, WM03P41M2, WM03P42M, WM03P42M2, WM03P51A, WM03P56M2, 2N60, WM03P91A, WM04N50M, WM04P50M, WM04P56M2, WM05DP01D, WM05N02G, WM05N02M, WM05N03M
Keywords - WM03P60M2 MOSFET specs
WM03P60M2 cross reference
WM03P60M2 equivalent finder
WM03P60M2 pdf lookup
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