Справочник MOSFET. WM03P60M2

 

WM03P60M2 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: WM03P60M2
   Маркировка: 30P6
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2 V
   Максимально допустимый постоянный ток стока |Id|: 6 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 4.1 nC
   Время нарастания (tr): 40 ns
   Выходная емкость (Cd): 90 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.04 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для WM03P60M2

 

 

WM03P60M2 Datasheet (PDF)

 ..1. Size:596K  way-on
 wm03p60m2.pdf

WM03P60M2 WM03P60M2

WM03P60M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -6A DS DR

 9.1. Size:538K  way-on
 wm03p41m2.pdf

WM03P60M2 WM03P60M2

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.2. Size:561K  way-on
 wm03p41m.pdf

WM03P60M2 WM03P60M2

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR

 9.3. Size:751K  way-on
 wm03p91a.pdf

WM03P60M2 WM03P60M2

WM03P91A 30V P-Channel Enhancement Mode Power MOSFET Description DDDWM03P91A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Smaintain superior switching performance. SSGFeatures SOP-8L V = -30V, I = -9.1A DS DR

 9.4. Size:500K  way-on
 wm03p27m.pdf

WM03P60M2 WM03P60M2

WM03P27M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -2.7A DS DR

 9.5. Size:538K  way-on
 wm03p42m2.pdf

WM03P60M2 WM03P60M2

WM03P42M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30V, I = -4.2A DS DR

 9.6. Size:539K  way-on
 wm03p42m.pdf

WM03P60M2 WM03P60M2

WM03P42M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.2A DS DR

 9.7. Size:519K  way-on
 wm03p56m2.pdf

WM03P60M2 WM03P60M2

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR

 9.8. Size:618K  way-on
 wm03p115r.pdf

WM03P60M2 WM03P60M2

WM03P115R 30V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM03P115R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -30V, I = -11.5A DS DR

 9.9. Size:966K  way-on
 wm03p51a.pdf

WM03P60M2 WM03P60M2

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR

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