All MOSFET. WM04P50M Datasheet

 

WM04P50M MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM04P50M
   Marking Code: 450
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.8 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT23

 WM04P50M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM04P50M Datasheet (PDF)

 ..1. Size:532K  way-on
 wm04p50m.pdf

WM04P50M WM04P50M

WM04P50M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -40 V, I = -5 A DS DR

 8.1. Size:538K  way-on
 wm04p56m2.pdf

WM04P50M WM04P50M

WM04P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -40V, I = -5.6A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top