WM04P56M2 Datasheet and Replacement

   Type Designator: WM04P56M2
   Marking Code: 4P56
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 5.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.5 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
     - MOSFET ⓘ Cross-Reference Search