WM04P56M2 Specs and Replacement
Type Designator: WM04P56M2
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 85 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
WM04P56M2 substitution
- MOSFET ⓘ Cross-Reference Search
WM04P56M2 datasheet
wm04p56m2.pdf
WM04P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -40V, I = -5.6A DS D R ... See More ⇒
wm04p50m.pdf
WM04P50M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -40 V, I = -5 A DS D R ... See More ⇒
Detailed specifications: WM03P42M, WM03P42M2, WM03P51A, WM03P56M2, WM03P60M2, WM03P91A, WM04N50M, WM04P50M, AO3400A, WM05DP01D, WM05N02G, WM05N02M, WM05N03M, WM05P01G, WM05P01M, WM05P02F, WM05P02G
Keywords - WM04P56M2 MOSFET specs
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