WM04P56M2 Datasheet and Replacement
Type Designator: WM04P56M2
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
WM04P56M2 substitution
WM04P56M2 Datasheet (PDF)
wm04p56m2.pdf
WM04P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -40V, I = -5.6A DS DR
wm04p50m.pdf
WM04P50M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -40 V, I = -5 A DS DR
Datasheet: WM03P42M , WM03P42M2 , WM03P51A , WM03P56M2 , WM03P60M2 , WM03P91A , WM04N50M , WM04P50M , RU6888R , WM05DP01D , WM05N02G , WM05N02M , WM05N03M , WM05P01G , WM05P01M , WM05P02F , WM05P02G .
History: AP3020 | FDB8453LZ | AP1333GU | 2SK2012 | SVT03100ND
Keywords - WM04P56M2 MOSFET datasheet
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History: AP3020 | FDB8453LZ | AP1333GU | 2SK2012 | SVT03100ND
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