WM05DP01D Datasheet and Replacement
Type Designator: WM05DP01D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT363
WM05DP01D substitution
WM05DP01D Datasheet (PDF)
wm05dp01d.pdf
WM05DP01DD Dual P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs D1 V = -50V, I = -0.13A DS DR
Datasheet: WM03P42M2 , WM03P51A , WM03P56M2 , WM03P60M2 , WM03P91A , WM04N50M , WM04P50M , WM04P56M2 , IRF730 , WM05N02G , WM05N02M , WM05N03M , WM05P01G , WM05P01M , WM05P02F , WM05P02G , WM05P02M .
History: SSW1N50A
Keywords - WM05DP01D MOSFET datasheet
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History: SSW1N50A
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