WM05DP01D Datasheet and Replacement

   Type Designator: WM05DP01D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 1 nS
   Cossⓘ - Output Capacitance: 6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT363
      - MOSFET Cross-Reference Search