WM05DP01D MOSFET. Datasheet pdf. Equivalent
Type Designator: WM05DP01D
Marking Code: B84
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
|Id|ⓘ - Maximum Drain Current: 0.13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 1 nS
Cossⓘ - Output Capacitance: 6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT363
WM05DP01D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM05DP01D Datasheet (PDF)
wm05dp01d.pdf
WM05DP01DD Dual P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs D1 V = -50V, I = -0.13A DS DR
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: TPCP8007-H | FQP65N06
History: TPCP8007-H | FQP65N06
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918