WM05N03M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM05N03M
Marking Code: SSE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.1 nC
trⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 5.9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT23
WM05N03M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM05N03M Datasheet (PDF)
wm05n03m.pdf
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WM05N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.3A DS DR
wm05n02m.pdf
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WM05N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.2A DS DR
wm05n02g.pdf
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WM05N02G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.22A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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