WM05N03M Specs and Replacement
Type Designator: WM05N03M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.5 nS
Cossⓘ - Output Capacitance: 5.9 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: SOT23
WM05N03M substitution
- MOSFET ⓘ Cross-Reference Search
WM05N03M datasheet
wm05n03m.pdf
WM05N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.3A DS D R ... See More ⇒
wm05n02m.pdf
WM05N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.2A DS D R ... See More ⇒
wm05n02g.pdf
WM05N02G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 50V, I = 0.22A DS D R ... See More ⇒
Detailed specifications: WM03P60M2, WM03P91A, WM04N50M, WM04P50M, WM04P56M2, WM05DP01D, WM05N02G, WM05N02M, 7N60, WM05P01G, WM05P01M, WM05P02F, WM05P02G, WM05P02M, WM05P20M, WM06DN03DE, WM06N03FB
Keywords - WM05N03M MOSFET specs
WM05N03M cross reference
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History: MDQ16N50GTP
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