WM05P02G Datasheet and Replacement
Type Designator: WM05P02G
Marking Code: 84E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 1.5 nC
tr ⓘ - Rise Time: 0.6 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT323
WM05P02G substitution
WM05P02G Datasheet (PDF)
wm05p02g.pdf

WM05P02G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02m.pdf

WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf

Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
wm05p01m.pdf

WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP70L60 | SVSP65R041P7HD4 | 2SK641 | SML60S18 | IRFS52N15DPBF
Keywords - WM05P02G MOSFET datasheet
WM05P02G cross reference
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History: STP70L60 | SVSP65R041P7HD4 | 2SK641 | SML60S18 | IRFS52N15DPBF



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