WM05P02G MOSFET. Datasheet pdf. Equivalent
Type Designator: WM05P02G
Marking Code: 84E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.5 nC
trⓘ - Rise Time: 0.6 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT323
WM05P02G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM05P02G Datasheet (PDF)
wm05p02g.pdf
WM05P02G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02m.pdf
WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf
Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
wm05p01m.pdf
WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p01g.pdf
WM05P01G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: 45N20 | STD12N05T4 | FDP047N10 | WSP4445 | 2SK764 | FDN5618P | NTMFD5C674NLT1G
History: 45N20 | STD12N05T4 | FDP047N10 | WSP4445 | 2SK764 | FDN5618P | NTMFD5C674NLT1G
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918