WM05P02G Specs and Replacement
Type Designator: WM05P02G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 0.6 nS
Cossⓘ - Output Capacitance: 5.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SOT323
WM05P02G substitution
- MOSFET ⓘ Cross-Reference Search
WM05P02G datasheet
wm05p02g.pdf
WM05P02G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS D R ... See More ⇒
wm05p02m.pdf
WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS D R ... See More ⇒
wm05p02f.pdf
Document W0803414, Rev A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS D G R ... See More ⇒
wm05p01m.pdf
WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS D R ... See More ⇒
Detailed specifications: WM04P56M2, WM05DP01D, WM05N02G, WM05N02M, WM05N03M, WM05P01G, WM05P01M, WM05P02F, IRLB3034, WM05P02M, WM05P20M, WM06DN03DE, WM06N03FB, WM06N03FE, WM06N03GE, WM06N03HE, WM06N03LE
Keywords - WM05P02G MOSFET specs
WM05P02G cross reference
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