WM05P20M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM05P20M
Marking Code: 0520'
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 35 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT23
WM05P20M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM05P20M Datasheet (PDF)
wm05p20m.pdf
WM05P20M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50 V, I = -2A DS DR
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Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
wm05p01m.pdf
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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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