WM05P20M Datasheet and Replacement
Type Designator: WM05P20M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: SOT23
WM05P20M substitution
WM05P20M Datasheet (PDF)
wm05p20m.pdf
WM05P20M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50 V, I = -2A DS DR
wm05p02m.pdf
WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf
Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
wm05p01m.pdf
WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
Datasheet: WM05N02G , WM05N02M , WM05N03M , WM05P01G , WM05P01M , WM05P02F , WM05P02G , WM05P02M , IRFB7545 , WM06DN03DE , WM06N03FB , WM06N03FE , WM06N03GE , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M .
History: WVM9.5N100 | MTH8N35 | AP6N6R5H | BRCS120P04DP
Keywords - WM05P20M MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WVM9.5N100 | MTH8N35 | AP6N6R5H | BRCS120P04DP
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