WM06N03GE Datasheet and Replacement
Type Designator: WM06N03GE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 5.6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT323
WM06N03GE substitution
WM06N03GE Datasheet (PDF)
wm06n03ge.pdf

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
wm06n03le.pdf

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
wm06n03m.pdf

WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
wm06n03fb.pdf

WM06N03FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 60V, I = 0.34A DS DDR
Datasheet: WM05P01M , WM05P02F , WM05P02G , WM05P02M , WM05P20M , WM06DN03DE , WM06N03FB , WM06N03FE , AON7403 , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M .
History: FDMS3600AS | UTT30P06G-TN3-R | IXFA12N50P | UTT4850L-S08-R | 2SK2606 | MTM45N05E
Keywords - WM06N03GE MOSFET datasheet
WM06N03GE cross reference
WM06N03GE equivalent finder
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History: FDMS3600AS | UTT30P06G-TN3-R | IXFA12N50P | UTT4850L-S08-R | 2SK2606 | MTM45N05E



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