All MOSFET. WM06N03M Datasheet

 

WM06N03M Datasheet and Replacement


   Type Designator: WM06N03M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 5.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.1 Ohm
   Package: SOT23
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WM06N03M Datasheet (PDF)

 ..1. Size:824K  way-on
 wm06n03m.pdf pdf_icon

WM06N03M

WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.1. Size:882K  way-on
 wm06n03ge.pdf pdf_icon

WM06N03M

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.2. Size:889K  way-on
 wm06n03le.pdf pdf_icon

WM06N03M

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.3. Size:462K  way-on
 wm06n03fb.pdf pdf_icon

WM06N03M

WM06N03FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 60V, I = 0.34A DS DDR

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History: BSZ035N03LSG | SVF9N90F

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