WM06N30MS Specs and Replacement
Type Designator: WM06N30MS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.5 nS
Cossⓘ - Output Capacitance: 26 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
Package: SOT23
WM06N30MS substitution
- MOSFET ⓘ Cross-Reference Search
WM06N30MS datasheet
wm06n30ms.pdf
WM06N30MS N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS D R ... See More ⇒
wm06n30m.pdf
WM06N30M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS D R ... See More ⇒
wm06n03ge.pdf
WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
wm06n03le.pdf
WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
Detailed specifications: WM06DN03DE, WM06N03FB, WM06N03FE, WM06N03GE, WM06N03HE, WM06N03LE, WM06N03M, WM06N30M, IRFP064N, WM06P17MR, WM10N02G, WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2
Keywords - WM06N30MS MOSFET specs
WM06N30MS cross reference
WM06N30MS equivalent finder
WM06N30MS pdf lookup
WM06N30MS substitution
WM06N30MS replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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