All MOSFET. WM06N30MS Datasheet

 

WM06N30MS Datasheet and Replacement


   Type Designator: WM06N30MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 26 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm
   Package: SOT23
 

 WM06N30MS substitution

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WM06N30MS Datasheet (PDF)

 ..1. Size:461K  way-on
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WM06N30MS

WM06N30MS N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS DR

 6.1. Size:854K  way-on
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WM06N30MS

WM06N30M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS DR

 9.1. Size:882K  way-on
 wm06n03ge.pdf pdf_icon

WM06N30MS

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 9.2. Size:889K  way-on
 wm06n03le.pdf pdf_icon

WM06N30MS

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

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Datasheet: WM06DN03DE , WM06N03FB , WM06N03FE , WM06N03GE , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M , IRFP064N , WM06P17MR , WM10N02G , WM10N02M , WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 .

History: AP9926 | AP6N3R7MT | NTMD6N03R2G | BRCS150P04DP | SSF65R130S2 | NTD4804N-1G

Keywords - WM06N30MS MOSFET datasheet

 WM06N30MS cross reference
 WM06N30MS equivalent finder
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