WM06N30MS PDF and Equivalents Search

 

WM06N30MS Specs and Replacement

Type Designator: WM06N30MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.083 Ohm

Package: SOT23

WM06N30MS substitution

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WM06N30MS datasheet

 ..1. Size:461K  way-on
wm06n30ms.pdf pdf_icon

WM06N30MS

WM06N30MS N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS D R ... See More ⇒

 6.1. Size:854K  way-on
wm06n30m.pdf pdf_icon

WM06N30MS

WM06N30M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 3A DS D R ... See More ⇒

 9.1. Size:882K  way-on
wm06n03ge.pdf pdf_icon

WM06N30MS

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

 9.2. Size:889K  way-on
wm06n03le.pdf pdf_icon

WM06N30MS

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

Detailed specifications: WM06DN03DE, WM06N03FB, WM06N03FE, WM06N03GE, WM06N03HE, WM06N03LE, WM06N03M, WM06N30M, IRFP064N, WM06P17MR, WM10N02G, WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2

Keywords - WM06N30MS MOSFET specs

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