WM06P17MR Specs and Replacement
Type Designator: WM06P17MR
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36.8 nS
Cossⓘ - Output Capacitance: 28 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: SOT23
WM06P17MR substitution
- MOSFET ⓘ Cross-Reference Search
WM06P17MR datasheet
wm06p17mr.pdf
WM06P17MR P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -60 V, I = -1.7A DS D R ... See More ⇒
Detailed specifications: WM06N03FB, WM06N03FE, WM06N03GE, WM06N03HE, WM06N03LE, WM06N03M, WM06N30M, WM06N30MS, AO4468, WM10N02G, WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2
Keywords - WM06P17MR MOSFET specs
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History: WM02N20G
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