WM06P17MR Datasheet and Replacement
Type Designator: WM06P17MR
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36.8 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: SOT23
WM06P17MR substitution
WM06P17MR Datasheet (PDF)
wm06p17mr.pdf
WM06P17MR P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -60 V, I = -1.7A DS DR
Datasheet: WM06N03FB , WM06N03FE , WM06N03GE , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , AO4468 , WM10N02G , WM10N02M , WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 .
History: WFJ5N65B | WMM08N80M3 | WMK18N50D1B | WMN08N70EM | WML11N80M3 | WMK38N60C2
Keywords - WM06P17MR MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WFJ5N65B | WMM08N80M3 | WMK18N50D1B | WMN08N70EM | WML11N80M3 | WMK38N60C2
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