WM10N02G MOSFET. Datasheet pdf. Equivalent
Type Designator: WM10N02G
Marking Code: B123
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 0.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.5 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 3.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT323
WM10N02G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM10N02G Datasheet (PDF)
wm10n02g.pdf
Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR
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