All MOSFET. WM10N02G Datasheet

 

WM10N02G Datasheet and Replacement


   Type Designator: WM10N02G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 3.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT323
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WM10N02G Datasheet (PDF)

 ..1. Size:324K  way-on
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WM10N02G

Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR

 7.1. Size:458K  way-on
 wm10n02m.pdf pdf_icon

WM10N02G

WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR

 9.1. Size:546K  way-on
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WM10N02G

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 9.2. Size:480K  way-on
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WM10N02G

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

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Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: 2SJ473-01S | IRF7759L2TR1PBF

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