All MOSFET. WM10N02M Datasheet

 

WM10N02M Datasheet and Replacement


   Type Designator: WM10N02M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 1.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT23
 

 WM10N02M substitution

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WM10N02M Datasheet (PDF)

 ..1. Size:458K  way-on
 wm10n02m.pdf pdf_icon

WM10N02M

WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR

 7.1. Size:324K  way-on
 wm10n02g.pdf pdf_icon

WM10N02M

Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR

 9.1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N02M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 9.2. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N02M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

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Datasheet: WM06N03GE , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , IRFZ44N , WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A .

History: IPP120N04S3-02

Keywords - WM10N02M MOSFET datasheet

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