All MOSFET. WM10N02M Datasheet

 

WM10N02M MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM10N02M
   Marking Code: B123
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 0.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.5 nC
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 1.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: SOT23

 WM10N02M Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM10N02M Datasheet (PDF)

 ..1. Size:458K  way-on
 wm10n02m.pdf

WM10N02M WM10N02M

WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR

 7.1. Size:324K  way-on
 wm10n02g.pdf

WM10N02M WM10N02M

Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR

 9.1. Size:546K  way-on
 wm10n35m2.pdf

WM10N02M WM10N02M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 9.2. Size:480K  way-on
 wm10n20m.pdf

WM10N02M WM10N02M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

 9.3. Size:855K  way-on
 wm10n33m.pdf

WM10N02M WM10N02M

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 9.4. Size:557K  way-on
 wm10n35m3m.pdf

WM10N02M WM10N02M

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ505

 

 
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