WM10N02M Specs and Replacement
Type Designator: WM10N02M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 1.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
Package: SOT23
WM10N02M substitution
- MOSFET ⓘ Cross-Reference Search
WM10N02M datasheet
wm10n02m.pdf
WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS D R ... See More ⇒
wm10n35m2.pdf
WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS D R ... See More ⇒
wm10n20m.pdf
WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS D R ... See More ⇒
Detailed specifications: WM06N03GE, WM06N03HE, WM06N03LE, WM06N03M, WM06N30M, WM06N30MS, WM06P17MR, WM10N02G, IRFZ44N, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2, WM4C62160A, WM6C61042A
Keywords - WM10N02M MOSFET specs
WM10N02M cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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