WM10N33M PDF and Equivalents Search

 

WM10N33M Specs and Replacement

Type Designator: WM10N33M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.6 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

WM10N33M substitution

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WM10N33M datasheet

 ..1. Size:855K  way-on
 wm10n33m.pdf pdf_icon

WM10N33M

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS D R ... See More ⇒

 8.1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N33M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS D R ... See More ⇒

 8.2. Size:557K  way-on
 wm10n35m3m.pdf pdf_icon

WM10N33M

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS D R ... See More ⇒

 9.1. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N33M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS D R ... See More ⇒

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Detailed specifications: WM06N03LE, WM06N03M, WM06N30M, WM06N30MS, WM06P17MR, WM10N02G, WM10N02M, WM10N20M, IRF740, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2, WM4C62160A, WM6C61042A, WMAA4N65D1B, WMK4N65D1B

Keywords - WM10N33M MOSFET specs

 WM10N33M cross reference

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