All MOSFET. WM10N33M Datasheet

 

WM10N33M Datasheet and Replacement


   Type Designator: WM10N33M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1.6 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
 

 WM10N33M substitution

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WM10N33M Datasheet (PDF)

 ..1. Size:855K  way-on
 wm10n33m.pdf pdf_icon

WM10N33M

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 8.1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N33M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 8.2. Size:557K  way-on
 wm10n35m3m.pdf pdf_icon

WM10N33M

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 9.1. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N33M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

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Datasheet: WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M , WM10N20M , IRF740 , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A , WMAA4N65D1B , WMK4N65D1B .

History: NCEP01T18 | RU8205G

Keywords - WM10N33M MOSFET datasheet

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