WM10N33M Datasheet and Replacement
Type Designator: WM10N33M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 1.6 nS
Cossⓘ - Output Capacitance: 35 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23
WM10N33M substitution
WM10N33M Datasheet (PDF)
wm10n33m.pdf

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR
wm10n35m2.pdf

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR
wm10n35m3m.pdf

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR
wm10n20m.pdf

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR
Datasheet: WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M , WM10N20M , IRF740 , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A , WMAA4N65D1B , WMK4N65D1B .
History: GSM3410 | S30N08M | GT060N10T | KF3N50IZ | GSM3407S | SSF2341E | 2SK2972
Keywords - WM10N33M MOSFET datasheet
WM10N33M cross reference
WM10N33M equivalent finder
WM10N33M lookup
WM10N33M substitution
WM10N33M replacement
History: GSM3410 | S30N08M | GT060N10T | KF3N50IZ | GSM3407S | SSF2341E | 2SK2972



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