WM10N35M3M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM10N35M3M
Marking Code: 1035
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT23-6L
WM10N35M3M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM10N35M3M Datasheet (PDF)
wm10n35m3m.pdf
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WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR
wm10n35m2.pdf
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WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR
wm10n33m.pdf
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WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR
wm10n20m.pdf
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WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR
wm10n02g.pdf
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Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR
wm10n02m.pdf
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WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
![WM10N35M3M](https://alltransistors.com/images/us.png)
![WM10N35M3M](https://alltransistors.com/images/es.png)
![WM10N35M3M](https://alltransistors.com/images/ru.png)
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