All MOSFET. WM10N35M3M Datasheet

 

WM10N35M3M Datasheet and Replacement


   Type Designator: WM10N35M3M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23-6L
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WM10N35M3M Datasheet (PDF)

 ..1. Size:557K  way-on
 wm10n35m3m.pdf pdf_icon

WM10N35M3M

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 6.1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N35M3M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 8.1. Size:855K  way-on
 wm10n33m.pdf pdf_icon

WM10N35M3M

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 9.1. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N35M3M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: RW1A020ZP | 2SK3927-01S | IPI100N04S3-03 | ME20N10-G | HSM3115 | MDS3753EURH | MMSF7P03HDR2

Keywords - WM10N35M3M MOSFET datasheet

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