WM10P20M2 Specs and Replacement
Type Designator: WM10P20M2
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: SOT23
WM10P20M2 substitution
- MOSFET ⓘ Cross-Reference Search
WM10P20M2 datasheet
wm10p20m2.pdf
WM10P20M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -100V, I = -2A DS D R ... See More ⇒
Detailed specifications: WM06N30MS, WM06P17MR, WM10N02G, WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, IRF540N, WM15P10M2, WM4C62160A, WM6C61042A, WMAA4N65D1B, WMK4N65D1B, WML4N65D1B, WMO4N65D1B, WMB010N04LG4
Keywords - WM10P20M2 MOSFET specs
WM10P20M2 cross reference
WM10P20M2 equivalent finder
WM10P20M2 pdf lookup
WM10P20M2 substitution
WM10P20M2 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: KF2N60P
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10
Popular searches
d313 transistor | 2sa1302 | 2sd315 | a1013 | 2sb554 | 2sd2560 | 2sc2078 transistor | bc558 datasheet