WM10P20M2 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WM10P20M2
   Marking Code: 10P2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: SOT23

WM10P20M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search