All MOSFET. WM4C62160A Datasheet

 

WM4C62160A Datasheet and Replacement


   Type Designator: WM4C62160A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 1900 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: CSP1515-4L
 

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WM4C62160A Datasheet (PDF)

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WM4C62160A

WM4C62160A 20V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m) SSS S SS(on)WM4C62160A uses advanced power trench technology 14.0 @VGS=4.5V that has been especially tailored to minimize the on-state 14.6 @VGS=4.0V resistance This device is suitable for un-directional or 20 8 15.0 @VGS=3.7V bidirectional load switch, facilitated by its common-drain

Datasheet: WM10N02G , WM10N02M , WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , 50N06 , WM6C61042A , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 .

History: IXTP6N100D2 | SSU80R1K3S | SML20L100 | IXTP64N055T | SD2932 | STD10NF06 | SSU80R850S

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