WM4C62160A PDF and Equivalents Search

 

WM4C62160A Specs and Replacement

Type Designator: WM4C62160A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1900 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: CSP1515-4L

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WM4C62160A datasheet

 ..1. Size:410K  way-on
 wm4c62160a.pdf pdf_icon

WM4C62160A

WM4C62160A 20V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m ) SSS S SS(on) WM4C62160A uses advanced power trench technology 14.0 @VGS=4.5V that has been especially tailored to minimize the on-state 14.6 @VGS=4.0V resistance This device is suitable for un-directional or 20 8 15.0 @VGS=3.7V bidirectional load switch, facilitated by its common-drain ... See More ⇒

Detailed specifications: WM10N02G, WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2, 50N06, WM6C61042A, WMAA4N65D1B, WMK4N65D1B, WML4N65D1B, WMO4N65D1B, WMB010N04LG4, WMB014N04LG4, WMB014N06HG4

Keywords - WM4C62160A MOSFET specs

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