All MOSFET. WM6C61042A Datasheet

 

WM6C61042A MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM6C61042A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.3 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 34 nC
   trⓘ - Rise Time: 6000 nS
   Cossⓘ - Output Capacitance: 401 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: CSP2.14X1.67-6L

 WM6C61042A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM6C61042A Datasheet (PDF)

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 wm6c61042a.pdf

WM6C61042A WM6C61042A

WM6C61042A 12V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m) SSS S SS(on)WM6C61042A uses advanced power trench technology 4.2 @VGS=4.5V that has been especially tailored to minimize the on-state 4.5 @VGS=3.8V resistance This device is suitable for un-directional or 12 8 5.2 @VGS=3.1V bidirectional load switch, facilitated by its common-drain

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MTB02N03H8

 

 
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