WM6C61042A PDF and Equivalents Search

 

WM6C61042A Specs and Replacement

Type Designator: WM6C61042A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6000 nS

Cossⓘ - Output Capacitance: 401 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm

Package: CSP2.14X1.67-6L

WM6C61042A substitution

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WM6C61042A datasheet

 ..1. Size:408K  way-on
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WM6C61042A

WM6C61042A 12V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m ) SSS S SS(on) WM6C61042A uses advanced power trench technology 4.2 @VGS=4.5V that has been especially tailored to minimize the on-state 4.5 @VGS=3.8V resistance This device is suitable for un-directional or 12 8 5.2 @VGS=3.1V bidirectional load switch, facilitated by its common-drain ... See More ⇒

Detailed specifications: WM10N02M, WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2, WM4C62160A, IRFP460, WMAA4N65D1B, WMK4N65D1B, WML4N65D1B, WMO4N65D1B, WMB010N04LG4, WMB014N04LG4, WMB014N06HG4, WMB014N06LG4

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