WM6C61042A Datasheet and Replacement
Type Designator: WM6C61042A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6000 nS
Cossⓘ - Output Capacitance: 401 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
Package: CSP2.14X1.67-6L
WM6C61042A substitution
WM6C61042A Datasheet (PDF)
wm6c61042a.pdf

WM6C61042A 12V Common-Drain Dual N-Channel MOSFET Description V (V) I (A) R TYP (m) SSS S SS(on)WM6C61042A uses advanced power trench technology 4.2 @VGS=4.5V that has been especially tailored to minimize the on-state 4.5 @VGS=3.8V resistance This device is suitable for un-directional or 12 8 5.2 @VGS=3.1V bidirectional load switch, facilitated by its common-drain
Datasheet: WM10N02M , WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , IRF640 , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 .
History: SSR1N45
Keywords - WM6C61042A MOSFET datasheet
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History: SSR1N45



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