WMAA4N65D1B MOSFET. Datasheet pdf. Equivalent
Type Designator: WMAA4N65D1B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 77 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 14.4 nS
Cossⓘ - Output Capacitance: 55.7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO251
WMAA4N65D1B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMAA4N65D1B Datasheet (PDF)
..1. Size:1584K way-on
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf
wmaa4n65d1b wmk4n65d1b wml4n65d1b wmo4n65d1b.pdf
WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur
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