All MOSFET. WMAA4N65D1B Datasheet

 

WMAA4N65D1B Datasheet and Replacement


   Type Designator: WMAA4N65D1B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 77 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14.4 nS
   Cossⓘ - Output Capacitance: 55.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
   Package: TO251
 

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WMAA4N65D1B Datasheet (PDF)

 ..1. Size:1584K  way-on
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WMAA4N65D1B

WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur

Datasheet: WM10N20M , WM10N33M , WM10N35M2 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A , IRFZ44 , WMK4N65D1B , WML4N65D1B , WMO4N65D1B , WMB010N04LG4 , WMB014N04LG4 , WMB014N06HG4 , WMB014N06LG4 , WMB017N03LG2 .

History: DH019N04I | APM2324A

Keywords - WMAA4N65D1B MOSFET datasheet

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