WMAA4N65D1B MOSFET Datasheet: N-Ch, 650V, 4A. Full specification with pinout and replacement list

WMAA4N65D1B Specs and Replacement

Type Designator: WMAA4N65D1B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 77 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.4 nS

Cossⓘ - Output Capacitance: 55.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm

Package: TO251

WMAA4N65D1B substitution

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WMAA4N65D1B datasheet

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WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur... See More ⇒

Detailed specifications: WM10N20M, WM10N33M, WM10N35M2, WM10N35M3M, WM10P20M2, WM15P10M2, WM4C62160A, WM6C61042A, IRFZ44, WMK4N65D1B, WML4N65D1B, WMO4N65D1B, WMB010N04LG4, WMB014N04LG4, WMB014N06HG4, WMB014N06LG4, WMB017N03LG2