All MOSFET. WMB053NV8HGS Datasheet

 

WMB053NV8HGS Datasheet and Replacement


   Type Designator: WMB053NV8HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN5060-8L
 

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WMB053NV8HGS Datasheet (PDF)

 ..1. Size:984K  way-on
 wmb053nv8hgs.pdf pdf_icon

WMB053NV8HGS

WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB053NV8HGS uses Wayon's advanced power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications.PDFN5060-8LF

 9.1. Size:639K  way-on
 wmb050n03lg4.pdf pdf_icon

WMB053NV8HGS

WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB050N03LG4 uses Wayon's 4th generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN506

Datasheet: WMB040N08HGS , WMB042DN03LG2 , WMB043N10HGS , WMB043N10LGS , WMB048NV6HG4 , WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , IRF9540N , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , WMB072N12HG2 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 .

History: AP6942GMT-HF | 2SK3676-01L

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