All MOSFET. WMB053NV8HGS Datasheet

 

WMB053NV8HGS Datasheet and Replacement


   Type Designator: WMB053NV8HGS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 720 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: PDFN5060-8L
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WMB053NV8HGS Datasheet (PDF)

 ..1. Size:984K  way-on
 wmb053nv8hgs.pdf pdf_icon

WMB053NV8HGS

WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB053NV8HGS uses Wayon's advanced power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications.PDFN5060-8LF

 9.1. Size:639K  way-on
 wmb050n03lg4.pdf pdf_icon

WMB053NV8HGS

WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB050N03LG4 uses Wayon's 4th generation power trench DDD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN506

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: SJMN380R65ZF | IPD80R900P7 | UF630G-T2Q-T | SVGP104R5NS | F5001H | MTBA5N10FP | CS8N80A8D

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