WMB053NV8HGS MOSFET Datasheet: N-Ch, 85V, 100A. Full specification with pinout and replacement list

WMB053NV8HGS Specs and Replacement

Type Designator: WMB053NV8HGS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 720 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: PDFN5060-8L

WMB053NV8HGS substitution

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WMB053NV8HGS datasheet

..1. Size:984K way-on
wmb053nv8hgs.pdf pdf_icon

WMB053NV8HGS 85V N-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB053NV8HGS uses Wayon's advanced power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss resistance and yet maintain superior switching performance. This device G s is well suited for high efficiency fast switching applications. PDFN5060-8L F... See More ⇒

9.1. Size:639K way-on
wmb050n03lg4.pdf pdf_icon

WMB050N03LG4 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB050N03LG4 uses Wayon's 4th generation power trench D D D D MOSFET technology that has been especially tailored to minimize the G ss s ss on-state resistance and yet maintain superior switching performance. G s This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

Detailed specifications: WMB040N08HGS, WMB042DN03LG2, WMB043N10HGS, WMB043N10LGS, WMB048NV6HG4, WMB048NV6LG4, WMB049N12HG2, WMB050N03LG4, SPP20N60C3, WMB060N08HG2, WMB060N08LG2, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, WMB080N10LG2