All MOSFET. WMB072N12HG2 Datasheet

 

WMB072N12HG2 Datasheet and Replacement


   Type Designator: WMB072N12HG2
   Marking Code: B072N12H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 471 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN5060-8L
 

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WMB072N12HG2 Datasheet (PDF)

 ..1. Size:544K  way-on
 wmb072n12hg2.pdf pdf_icon

WMB072N12HG2

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssresistance and yet maintain superior switching performance. This ssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

 5.1. Size:625K  way-on
 wmb072n12lg2-s.pdf pdf_icon

WMB072N12HG2

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB072N12LG2-S uses Wayon's 2nd generation power trench D DMOSFET technology that has been especially tailored to minimize the GsssssGon-state resistance and yet maintain superior switching performance. sThis device is well suited for high efficiency fast switching applications. PDFN

Datasheet: WMB048NV6LG4 , WMB049N12HG2 , WMB050N03LG4 , WMB053NV8HGS , WMB060N08HG2 , WMB060N08LG2 , WMB060N10HGS , WMB060N10LGS , 4N60 , WMB072N12LG2-S , WMB080N03LG2 , WMB080N10LG2 , WMB090DN04LG2 , WMB090DNV6LG4 , WMB090N04LG2 , WMB090NV6LG4 , WMB093N15HG4 .

Keywords - WMB072N12HG2 MOSFET datasheet

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