All MOSFET. WMB072N12HG2 Datasheet

 

WMB072N12HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB072N12HG2
   Marking Code: B072N12H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 7.8 nS
   Cossⓘ - Output Capacitance: 471 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: PDFN5060-8L

 WMB072N12HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB072N12HG2 Datasheet (PDF)

 ..1. Size:544K  way-on
 wmb072n12hg2.pdf

WMB072N12HG2 WMB072N12HG2

WMB072N12HG2 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB072N12HG2 uses Wayon's 2nd generation power trench MOSFET DD Dtechnology that has been especially tailored to minimize the on-state Gsssresistance and yet maintain superior switching performance. This ssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

 5.1. Size:625K  way-on
 wmb072n12lg2-s.pdf

WMB072N12HG2 WMB072N12HG2

WMB072N12LG2-S 120V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB072N12LG2-S uses Wayon's 2nd generation power trench D DMOSFET technology that has been especially tailored to minimize the GsssssGon-state resistance and yet maintain superior switching performance. sThis device is well suited for high efficiency fast switching applications. PDFN

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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