All MOSFET. WMB080N10LG2 Datasheet

 

WMB080N10LG2 Datasheet and Replacement


   Type Designator: WMB080N10LG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 359 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L
      - MOSFET Cross-Reference Search

 

WMB080N10LG2 Datasheet (PDF)

 ..1. Size:674K  way-on
 wmb080n10lg2.pdf pdf_icon

WMB080N10LG2

WMB080N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN

 7.1. Size:638K  way-on
 wmb080n03lg2.pdf pdf_icon

WMB080N10LG2

WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 2SK2778 | 2SK1335L | APT60M75JVR | NCE0250D | MGSF2N02EL | FQP8N60C | FRM230R

Keywords - WMB080N10LG2 MOSFET datasheet

 WMB080N10LG2 cross reference
 WMB080N10LG2 equivalent finder
 WMB080N10LG2 lookup
 WMB080N10LG2 substitution
 WMB080N10LG2 replacement

 

 
Back to Top

 


 
.