All MOSFET. WMB080N10LG2 Datasheet

 

WMB080N10LG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB080N10LG2
   Marking Code: B080N10L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 84 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 74 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30.8 nC
   trⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 359 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L

 WMB080N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB080N10LG2 Datasheet (PDF)

 ..1. Size:674K  way-on
 wmb080n10lg2.pdf

WMB080N10LG2 WMB080N10LG2

WMB080N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN

 7.1. Size:638K  way-on
 wmb080n03lg2.pdf

WMB080N10LG2 WMB080N10LG2

WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5

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History: IPD60R360P7S

 

 
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