WMB080N10LG2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB080N10LG2
Marking Code: B080N10L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 84 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 74 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30.8 nC
trⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 359 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5060-8L
WMB080N10LG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB080N10LG2 Datasheet (PDF)
wmb080n10lg2.pdf
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WMB080N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN
wmb080n03lg2.pdf
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WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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