WMB080N10LG2 PDF and Equivalents Search

 

WMB080N10LG2 Specs and Replacement

Type Designator: WMB080N10LG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 84 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 74 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.2 nS

Cossⓘ - Output Capacitance: 359 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: PDFN5060-8L

WMB080N10LG2 substitution

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WMB080N10LG2 datasheet

 ..1. Size:674K  way-on
 wmb080n10lg2.pdf pdf_icon

WMB080N10LG2

WMB080N10LG2 100V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB080N10LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This device s ss G s is well suited for high efficiency fast switching applications. PDFN... See More ⇒

 7.1. Size:638K  way-on
 wmb080n03lg2.pdf pdf_icon

WMB080N10LG2

WMB080N03LG2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB080N03LG2 uses Wayon's 2nd generation power trench MOSFET D D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5... See More ⇒

Detailed specifications: WMB053NV8HGS, WMB060N08HG2, WMB060N08LG2, WMB060N10HGS, WMB060N10LGS, WMB072N12HG2, WMB072N12LG2-S, WMB080N03LG2, IRFB3607, WMB090DN04LG2, WMB090DNV6LG4, WMB090N04LG2, WMB090NV6LG4, WMB093N15HG4, WMB098N03LG2, WMB099N10HGS, WMB099N10LG2

Keywords - WMB080N10LG2 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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