WMB140NV6LG4 PDF and Equivalents Search

 

WMB140NV6LG4 Specs and Replacement

Type Designator: WMB140NV6LG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.1 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN5060-8L

WMB140NV6LG4 substitution

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WMB140NV6LG4 datasheet

 ..1. Size:978K  way-on
 wmb140nv6lg4.pdf pdf_icon

WMB140NV6LG4

WMB140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET Description D D D DD D D D WMB140NV6LG4 uses Wayon's 4th generation power trench MOSFET G technology that has been especially tailored to minimize the on-state ss s ss G s resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506... See More ⇒

Detailed specifications: WMB108N03T1, WMB115N15HG4, WMB115N15LG4, WMB119N10LG2, WMB119N12HG4, WMB119N12LG4, WMB120P06TS, WMB129N10T2, 18N50, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS

Keywords - WMB140NV6LG4 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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