All MOSFET. WMB140NV6LG4 Datasheet

 

WMB140NV6LG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB140NV6LG4
   Marking Code: 140NV6L4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 5.1 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: PDFN5060-8L

 WMB140NV6LG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB140NV6LG4 Datasheet (PDF)

 ..1. Size:978K  way-on
 wmb140nv6lg4.pdf

WMB140NV6LG4 WMB140NV6LG4

WMB140NV6LG4 65V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB140NV6LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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