WMB150N03TS Specs and Replacement
Type Designator: WMB150N03TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.2 nS
Cossⓘ - Output Capacitance: 672 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PDFN5060-8L
WMB150N03TS substitution
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WMB150N03TS datasheet
wmb150n03ts.pdf
WMB150N03TS 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB150N03TS uses advanced power trench technology that has G been especially tailored to minimize the on-state resistance and yet ss s ss G s maintain superior switching performance. Features PDFN5060-8L V = 30V, I = 150A DS D R ... See More ⇒
Detailed specifications: WMB115N15HG4, WMB115N15LG4, WMB119N10LG2, WMB119N12HG4, WMB119N12LG4, WMB120P06TS, WMB129N10T2, WMB140NV6LG4, 20N50, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN
Keywords - WMB150N03TS MOSFET specs
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