All MOSFET. WMB150N03TS Datasheet

 

WMB150N03TS Datasheet and Replacement


   Type Designator: WMB150N03TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN5060-8L
 

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WMB150N03TS Datasheet (PDF)

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WMB150N03TS

WMB150N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB150N03TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = 30V, I = 150A DS DR

Datasheet: WMB115N15HG4 , WMB115N15LG4 , WMB119N10LG2 , WMB119N12HG4 , WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , 2N60 , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN .

History: WMB175DN10LG4

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