All MOSFET. WMB150N03TS Datasheet

 

WMB150N03TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB150N03TS
   Marking Code: B150N03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 100 nC
   trⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 672 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: PDFN5060-8L

 WMB150N03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB150N03TS Datasheet (PDF)

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 wmb150n03ts.pdf

WMB150N03TS WMB150N03TS

WMB150N03TS 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB150N03TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = 30V, I = 150A DS DR

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