All MOSFET. WMB190N15HG4 Datasheet

 

WMB190N15HG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB190N15HG4
   Marking Code: 190N15H4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 104.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.8 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: PDFN5060-8L

 WMB190N15HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB190N15HG4 Datasheet (PDF)

 ..1. Size:980K  way-on
 wmb190n15hg4.pdf

WMB190N15HG4 WMB190N15HG4

WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB190N15HG4 uses Wayon's 4th generation power trench DD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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