All MOSFET. WMB190N15HG4 Datasheet

 

WMB190N15HG4 Datasheet and Replacement


   Type Designator: WMB190N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: PDFN5060-8L
 

 WMB190N15HG4 substitution

   - MOSFET ⓘ Cross-Reference Search

 

WMB190N15HG4 Datasheet (PDF)

 ..1. Size:980K  way-on
 wmb190n15hg4.pdf pdf_icon

WMB190N15HG4

WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB190N15HG4 uses Wayon's 4th generation power trench DD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , IRFZ24N , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS .

History: NTB5405NG | IRL3716LPBF

Keywords - WMB190N15HG4 MOSFET datasheet

 WMB190N15HG4 cross reference
 WMB190N15HG4 equivalent finder
 WMB190N15HG4 lookup
 WMB190N15HG4 substitution
 WMB190N15HG4 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.