All MOSFET. WMB190N15HG4 Datasheet

 

WMB190N15HG4 Datasheet and Replacement


   Type Designator: WMB190N15HG4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 148 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: PDFN5060-8L
 

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WMB190N15HG4 Datasheet (PDF)

 ..1. Size:980K  way-on
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WMB190N15HG4

WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB190N15HG4 uses Wayon's 4th generation power trench DD DMOSFET technology that has been especially tailored to minimize the Gssssson-state resistance and yet maintain superior switching performance. GsThis device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: WMB119N12LG4 , WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , 8N60 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS .

History: OSG60R580DF

Keywords - WMB190N15HG4 MOSFET datasheet

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