WMB190N15HG4 MOSFET Datasheet: N-Ch, 150V, 50A. Full specification with pinout and replacement list

WMB190N15HG4 Specs and Replacement

Type Designator: WMB190N15HG4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 148 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm

Package: PDFN5060-8L

WMB190N15HG4 substitution

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WMB190N15HG4 datasheet

..1. Size:980K way-on
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WMB190N15HG4 150V N-Channel Enhancement Mode Power MOSFET Description D D D D D WMB190N15HG4 uses Wayon's 4th generation power trench D D D MOSFET technology that has been especially tailored to minimize the G ss s ss on-state resistance and yet maintain superior switching performance. G s This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒

Detailed specifications: WMB119N12LG4, WMB120P06TS, WMB129N10T2, WMB140NV6LG4, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, IRFZ24N, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS