All MOSFET. WMB240P10HG4 Datasheet

 

WMB240P10HG4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB240P10HG4
   Marking Code: 240P10H4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.4 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 64.6 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: PDFN5060-8L

 WMB240P10HG4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB240P10HG4 Datasheet (PDF)

 ..1. Size:637K  way-on
 wmb240p10hg4.pdf

WMB240P10HG4 WMB240P10HG4

WMB240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB240P10HG4 uses Wayon's4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGresistance and yet maintain superior switching performance. This sdevice is well suited for high efficiency fast switching applications. PDFN5060-

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