All MOSFET. WMB240P10HG4 Datasheet

 

WMB240P10HG4 Datasheet and Replacement


   Type Designator: WMB240P10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 53 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: PDFN5060-8L
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WMB240P10HG4 Datasheet (PDF)

 ..1. Size:637K  way-on
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WMB240P10HG4

WMB240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB240P10HG4 uses Wayon's4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGresistance and yet maintain superior switching performance. This sdevice is well suited for high efficiency fast switching applications. PDFN5060-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: UF3205L-TQ2-T | WSP4800 | 3SK66 | 2SK1159 | STK16N10L | HGN042N10AL | RQ3E150GN

Keywords - WMB240P10HG4 MOSFET datasheet

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