WMB240P10HG4 PDF and Equivalents Search

 

WMB240P10HG4 Specs and Replacement

Type Designator: WMB240P10HG4

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 53 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 328 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: PDFN5060-8L

WMB240P10HG4 substitution

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WMB240P10HG4 datasheet

 ..1. Size:637K  way-on
 wmb240p10hg4.pdf pdf_icon

WMB240P10HG4

WMB240P10HG4 100V P-Channel Enhancement Mode Power MOSFET Description D D D DD D WMB240P10HG4 uses Wayon's4th generation power trench MOSFET D D technology that has been especially tailored to minimize the on-state G ss s ss G resistance and yet maintain superior switching performance. This s device is well suited for high efficiency fast switching applications. PDFN5060-... See More ⇒

Detailed specifications: WMB120P06TS, WMB129N10T2, WMB140NV6LG4, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, 2N60, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1

Keywords - WMB240P10HG4 MOSFET specs

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