All MOSFET. WMB240P10HG4 Datasheet

 

WMB240P10HG4 Datasheet and Replacement


   Type Designator: WMB240P10HG4
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 53 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: PDFN5060-8L
 

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WMB240P10HG4 Datasheet (PDF)

 ..1. Size:637K  way-on
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WMB240P10HG4

WMB240P10HG4 100V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB240P10HG4 uses Wayon's4th generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state GsssssGresistance and yet maintain superior switching performance. This sdevice is well suited for high efficiency fast switching applications. PDFN5060-

Datasheet: WMB120P06TS , WMB129N10T2 , WMB140NV6LG4 , WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , IRF830 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 .

History: HMS8N60 | TPC8024-H | NVTFS6H854NL | RFD7N10LE | IXTQ110N10P | TPC8062-H

Keywords - WMB240P10HG4 MOSFET datasheet

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