WMB26N06TS PDF and Equivalents Search

 

WMB26N06TS Specs and Replacement

Type Designator: WMB26N06TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.3 nS

Cossⓘ - Output Capacitance: 60 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: PDFN5060-8L

WMB26N06TS substitution

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WMB26N06TS datasheet

 ..1. Size:644K  way-on
 wmb26n06ts.pdf pdf_icon

WMB26N06TS

WMB26N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D WMB26N06TS uses advanced power trench technology that has D D D been especially tailored to minimize the on-state resistance and yet G ss maintain superior switching performance. s ss G s Features PDFN5060-8L V = 60V, I = 26A DS D R ... See More ⇒

 9.1. Size:629K  way-on
 wmb26dn06ts.pdf pdf_icon

WMB26N06TS

WMB26DN06TS 60V Dual N-Channel Enhancement Mode Power MOSFET Description D2 D1 D2 D1 D1 D2 D1 D2 WMB26DN06TS uses advanced power trench technology that has S1 been especially tailored to minimize the on-state resistance and yet G1 G2 S2 S2 G1 G2 maintain superior switching performance. S1 PDFN5060-8L Features V = 60V, I = 26A DS D R ... See More ⇒

Detailed specifications: WMB140NV6LG4, WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, P60NF06, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS

Keywords - WMB26N06TS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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