All MOSFET. WMB31430DN Datasheet

 

WMB31430DN MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB31430DN
   Marking Code: B31430DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31.1 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN5060-8L

 WMB31430DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB31430DN Datasheet (PDF)

 ..1. Size:603K  way-on
 wmb31430dn.pdf

WMB31430DN WMB31430DN

WMB31430DN 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB31430DN uses Wayon's 2nd generation power trench MOSFET technology that has been especially G2S1/D2tailored to minimize the on-state resistance and yet S1/D2S1/D2S1/D2S1/D2S1/D2maintain superior switching performance. This device is S2G2well suited for high efficiency fast switching applic

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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