All MOSFET. WMB31430DN Datasheet

 

WMB31430DN Datasheet and Replacement


   Type Designator: WMB31430DN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 24 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: PDFN5060-8L
 

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WMB31430DN Datasheet (PDF)

 ..1. Size:603K  way-on
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WMB31430DN

WMB31430DN 30V Dual N-Channel Enhancement Mode Power MOSFET DescriptionWMB31430DN uses Wayon's 2nd generation power trench MOSFET technology that has been especially G2S1/D2tailored to minimize the on-state resistance and yet S1/D2S1/D2S1/D2S1/D2S1/D2maintain superior switching performance. This device is S2G2well suited for high efficiency fast switching applic

Datasheet: WMB150N03TS , WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , IRF520 , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 .

History: XP152A12C0MR-G

Keywords - WMB31430DN MOSFET datasheet

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