WMB31430DN MOSFET Datasheet: N-Ch, 30V, 56A. Full specification with pinout and replacement list

WMB31430DN Specs and Replacement

Type Designator: WMB31430DN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 24 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 56 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: PDFN5060-8L

WMB31430DN substitution

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WMB31430DN datasheet

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WMB31430DN 30V Dual N-Channel Enhancement Mode Power MOSFET Description WMB31430DN uses Wayon's 2nd generation power trench MOSFET technology that has been especially G2 S1/D2 tailored to minimize the on-state resistance and yet S1/D2 S1/D2 S1/D2 S1/D2 S1/D2 maintain superior switching performance. This device is S2 G2 well suited for high efficiency fast switching applic... See More ⇒

Detailed specifications: WMB150N03TS, WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, 75N75, WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2