All MOSFET. WMB340N20HG2 Datasheet

 

WMB340N20HG2 Datasheet and Replacement


   Type Designator: WMB340N20HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 141 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: PDFN5060-8L
 

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WMB340N20HG2 Datasheet (PDF)

 ..1. Size:1115K  way-on
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WMB340N20HG2

WMB340N20HG2 200V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB340N20HG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN5060

Datasheet: WMB175DN10LG4 , WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , RU6888R , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 .

History: RSS100N03T | ME4856 | CHM7350JGP

Keywords - WMB340N20HG2 MOSFET datasheet

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