WMB340N20HG2 PDF and Equivalents Search

 

WMB340N20HG2 Specs and Replacement

Type Designator: WMB340N20HG2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 141 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: PDFN5060-8L

WMB340N20HG2 substitution

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WMB340N20HG2 datasheet

 ..1. Size:1115K  way-on
 wmb340n20hg2.pdf pdf_icon

WMB340N20HG2

WMB340N20HG2 200V N-Channel Enhancement Mode Power MOSFET Description D D D WMB340N20HG2 uses Wayon's 2nd generation power trench MOSFET DD D D D technology that has been especially tailored to minimize the on-state G ss resistance and yet maintain superior switching performance. This s ss G s device is well suited for high efficiency fast switching applications. PDFN5060... See More ⇒

Detailed specifications: WMB175DN10LG4, WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, AO3400A, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2

Keywords - WMB340N20HG2 MOSFET specs

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