All MOSFET. WMB35P04T1 Datasheet

 

WMB35P04T1 Datasheet and Replacement


   Type Designator: WMB35P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN5060-8L
 

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WMB35P04T1 Datasheet (PDF)

 ..1. Size:629K  way-on
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WMB35P04T1

WMB35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P04T1 uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures V = -40V, I = -35A PDFN5060-8LDS DR

 7.1. Size:614K  way-on
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WMB35P04T1

WMB35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = -60V, I = -35A DS DR

Datasheet: WMB175N10HG4 , WMB175N10LG4 , WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , IRF730 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 .

History: MTE130N20KE3 | HCFL60R190 | IXTP96P085T | SMG2328S | UTT40N03 | OSG60R180FF | STP9NK65ZFP

Keywords - WMB35P04T1 MOSFET datasheet

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