All MOSFET. WMB35P04T1 Datasheet

 

WMB35P04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB35P04T1
   Marking Code: B35P04
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN5060-8L

 WMB35P04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB35P04T1 Datasheet (PDF)

 ..1. Size:629K  way-on
 wmb35p04t1.pdf

WMB35P04T1 WMB35P04T1

WMB35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P04T1 uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures V = -40V, I = -35A PDFN5060-8LDS DR

 7.1. Size:614K  way-on
 wmb35p06ts.pdf

WMB35P04T1 WMB35P04T1

WMB35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = -60V, I = -35A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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