WMB35P04T1 PDF and Equivalents Search

 

WMB35P04T1 Specs and Replacement

Type Designator: WMB35P04T1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.2 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: PDFN5060-8L

WMB35P04T1 substitution

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WMB35P04T1 datasheet

 ..1. Size:629K  way-on
 wmb35p04t1.pdf pdf_icon

WMB35P04T1

WMB35P04T1 40V P-Channel Enhancement Mode Power MOSFET Description WMB35P04T1 uses advanced power trench technology that has D D D D D D D D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features V = -40V, I = -35A PDFN5060-8L DS D R ... See More ⇒

 7.1. Size:614K  way-on
 wmb35p06ts.pdf pdf_icon

WMB35P04T1

WMB35P06TS 60V P-Channel Enhancement Mode Power MOSFET Description WMB35P06TS uses advanced power trench technology that has been D D D D D D D D especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G ss s ss G s Features PDFN5060-8L V = -60V, I = -35A DS D R ... See More ⇒

Detailed specifications: WMB175N10HG4, WMB175N10LG4, WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, IRFB31N20D, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1

Keywords - WMB35P04T1 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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