All MOSFET. WMB35P04T1 Datasheet

 

WMB35P04T1 Datasheet and Replacement


   Type Designator: WMB35P04T1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: PDFN5060-8L
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WMB35P04T1 Datasheet (PDF)

 ..1. Size:629K  way-on
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WMB35P04T1

WMB35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P04T1 uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures V = -40V, I = -35A PDFN5060-8LDS DR

 7.1. Size:614K  way-on
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WMB35P04T1

WMB35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = -60V, I = -35A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FQPF44N08T | ME8029 | RZR040P01 | IXFN40N90P | SVG086R0NSTR | WMB025N06LG4 | IXTH27N40MB

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