All MOSFET. WMB35P06TS Datasheet

 

WMB35P06TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB35P06TS
   Marking Code: B35P06S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: PDFN5060-8L

 WMB35P06TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB35P06TS Datasheet (PDF)

 ..1. Size:614K  way-on
 wmb35p06ts.pdf

WMB35P06TS WMB35P06TS

WMB35P06TS 60V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P06TS uses advanced power trench technology that has been D DDDDDD Despecially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures PDFN5060-8L V = -60V, I = -35A DS DR

 7.1. Size:629K  way-on
 wmb35p04t1.pdf

WMB35P06TS WMB35P06TS

WMB35P04T1 40V P-Channel Enhancement Mode Power MOSFET DescriptionWMB35P04T1 uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GsssssGsFeatures V = -40V, I = -35A PDFN5060-8LDS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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