All MOSFET. WMB40N04TS Datasheet

 

WMB40N04TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB40N04TS
   Marking Code: B40N04S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.2 nC
   trⓘ - Rise Time: 2.1 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN5060-8L

 WMB40N04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB40N04TS Datasheet (PDF)

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 wmb40n04ts.pdf

WMB40N04TS WMB40N04TS

WMB40N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB40N04TS uses advanced power trench technology that has been DD Despecially tailored to minimize the on-state resistance and yet Gssmaintain superior switching performance. sssGsFeatures PDFN5060-8L V = 40V, I = 40A DS DR

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History: AUIRF7341Q | AP3R303GMT | NP80N055MLE | AP3403GJ

 

 
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