All MOSFET. WMB40N04TS Datasheet

 

WMB40N04TS Datasheet and Replacement


   Type Designator: WMB40N04TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.1 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: PDFN5060-8L
 

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WMB40N04TS Datasheet (PDF)

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WMB40N04TS

WMB40N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB40N04TS uses advanced power trench technology that has been DD Despecially tailored to minimize the on-state resistance and yet Gssmaintain superior switching performance. sssGsFeatures PDFN5060-8L V = 40V, I = 40A DS DR

Datasheet: WMB190N15HG4 , WMB240P10HG4 , WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , IRF1405 , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS .

History: IRL3715L

Keywords - WMB40N04TS MOSFET datasheet

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