WMB40N04TS MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB40N04TS
Marking Code: B40N04S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 22.2 nC
trⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5060-8L
WMB40N04TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB40N04TS Datasheet (PDF)
wmb40n04ts.pdf
WMB40N04TS 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDWMB40N04TS uses advanced power trench technology that has been DD Despecially tailored to minimize the on-state resistance and yet Gssmaintain superior switching performance. sssGsFeatures PDFN5060-8L V = 40V, I = 40A DS DR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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