WMB40N04TS Specs and Replacement
Type Designator: WMB40N04TS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 33 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: PDFN5060-8L
WMB40N04TS substitution
- MOSFET ⓘ Cross-Reference Search
WMB40N04TS datasheet
wmb40n04ts.pdf
WMB40N04TS 40V N-Channel Enhancement Mode Power MOSFET Description D D D D D WMB40N04TS uses advanced power trench technology that has been D D D especially tailored to minimize the on-state resistance and yet G ss maintain superior switching performance. s ss G s Features PDFN5060-8L V = 40V, I = 40A DS D R ... See More ⇒
Detailed specifications: WMB190N15HG4, WMB240P10HG4, WMB26DN06TS, WMB26N06TS, WMB31430DN, WMB340N20HG2, WMB35P04T1, WMB35P06TS, IRF1405, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS
Keywords - WMB40N04TS MOSFET specs
WMB40N04TS cross reference
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