All MOSFET. WMB50P03TS Datasheet

 

WMB50P03TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB50P03TS
   Marking Code: B50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5060-8L

 WMB50P03TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB50P03TS Datasheet (PDF)

 ..1. Size:622K  way-on
 wmb50p03ts.pdf

WMB50P03TS WMB50P03TS

WMB50P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB50P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -50A DS DR

 7.1. Size:620K  way-on
 wmb50p04ts.pdf

WMB50P03TS WMB50P03TS

WMB50P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DWMB50P04TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures V = - 40V, I = - 50A DS D PDFN5060-8LR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: ZVN4206A

 

 
Back to Top