All MOSFET. WMB50P03TS Datasheet

 

WMB50P03TS Datasheet and Replacement


   Type Designator: WMB50P03TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PDFN5060-8L
 

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WMB50P03TS Datasheet (PDF)

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WMB50P03TS

WMB50P03TS 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB50P03TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -30V, I = -50A DS DR

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WMB50P03TS

WMB50P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DWMB50P04TS uses advanced power trench technology that has DDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures V = - 40V, I = - 50A DS D PDFN5060-8LR

Datasheet: WMB26DN06TS , WMB26N06TS , WMB31430DN , WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , RU7088R , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 .

History: MTH8N60 | MEE42942-G | SVF4N60CAMJ | SFB082N68C2 | HM40N04K | JCS8N60BB | HPB068NE7STA

Keywords - WMB50P03TS MOSFET datasheet

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