WMB52N03T2 Specs and Replacement
Type Designator: WMB52N03T2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: PDFN5060-8L
WMB52N03T2 substitution
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WMB52N03T2 datasheet
wmb52n03t2.pdf
WMB52N03T2 30V N-Channel Enhancement Mode Power MOSFET Description D D D D WMB52N03T2 uses advanced power trench technology that has D D D D been especially tailored to minimize the on-state resistance and G yet maintain superior switching performance. ss ss s G s Features PDFN5060-8L V = 30V, I = 52A DS D R ... See More ⇒
Detailed specifications: WMB340N20HG2, WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, IRLB3034, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS
Keywords - WMB52N03T2 MOSFET specs
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