All MOSFET. WMB52N03T2 Datasheet

 

WMB52N03T2 Datasheet and Replacement


   Type Designator: WMB52N03T2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: PDFN5060-8L
 

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WMB52N03T2 Datasheet (PDF)

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WMB52N03T2

WMB52N03T2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DWMB52N03T2 uses advanced power trench technology that has D DDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 30V, I = 52A DS DR

Datasheet: WMB340N20HG2 , WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , 60N06 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS .

History: SE2303 | WMB60P02TS

Keywords - WMB52N03T2 MOSFET datasheet

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