All MOSFET. WMB56N04T1 Datasheet

 

WMB56N04T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB56N04T1
   Marking Code: B52N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8 nC
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: PDFN5060-8L

 WMB56N04T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB56N04T1 Datasheet (PDF)

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 wmb56n04t1.pdf

WMB56N04T1 WMB56N04T1

WMB56N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDD DDWMB56N04T1 uses advanced power trench technology that has D Dbeen especially tailored to minimize the on-state resistance and Gssyet maintain superior switching performance. ss sGsFeatures PDFN5060-8L V = 40V, I = 56A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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