All MOSFET. WMB56N04T1 Datasheet

 

WMB56N04T1 Datasheet and Replacement


   Type Designator: WMB56N04T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: PDFN5060-8L
 

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WMB56N04T1 Datasheet (PDF)

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WMB56N04T1

WMB56N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDD DDWMB56N04T1 uses advanced power trench technology that has D Dbeen especially tailored to minimize the on-state resistance and Gssyet maintain superior switching performance. ss sGsFeatures PDFN5060-8L V = 40V, I = 56A DS DR

Datasheet: WMB35P04T1 , WMB35P06TS , WMB40N04TS , WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , IRF9640 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS .

History: NVTFS005N04C | AP90T03GR

Keywords - WMB56N04T1 MOSFET datasheet

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