WMB56N04T1 Specs and Replacement
Type Designator: WMB56N04T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 400 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
Package: PDFN5060-8L
WMB56N04T1 substitution
- MOSFET ⓘ Cross-Reference Search
WMB56N04T1 datasheet
wmb56n04t1.pdf
WMB56N04T1 40V N-Channel Enhancement Mode Power MOSFET Description D D D D DD WMB56N04T1 uses advanced power trench technology that has D D been especially tailored to minimize the on-state resistance and G ss yet maintain superior switching performance. ss s G s Features PDFN5060-8L V = 40V, I = 56A DS D R ... See More ⇒
Detailed specifications: WMB35P04T1, WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, IRF9640, WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS
Keywords - WMB56N04T1 MOSFET specs
WMB56N04T1 cross reference
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WMB56N04T1 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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