All MOSFET. WMB56N04T1 Datasheet

 

WMB56N04T1 Datasheet and Replacement


   Type Designator: WMB56N04T1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 52 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: PDFN5060-8L
      - MOSFET Cross-Reference Search

 

WMB56N04T1 Datasheet (PDF)

 ..1. Size:628K  way-on
 wmb56n04t1.pdf pdf_icon

WMB56N04T1

WMB56N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDD DDWMB56N04T1 uses advanced power trench technology that has D Dbeen especially tailored to minimize the on-state resistance and Gssyet maintain superior switching performance. ss sGsFeatures PDFN5060-8L V = 40V, I = 56A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RJK1525DPE | SDFE22JAB | STP25N06 | HCI70R360 | MTN15N50E3 | OSG60R099FEZF | DMP4050SSS

Keywords - WMB56N04T1 MOSFET datasheet

 WMB56N04T1 cross reference
 WMB56N04T1 equivalent finder
 WMB56N04T1 lookup
 WMB56N04T1 substitution
 WMB56N04T1 replacement

 

 
Back to Top

 


 
.