All MOSFET. WMB58N03T1 Datasheet

 

WMB58N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB58N03T1
   Marking Code: B58N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L

 WMB58N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB58N03T1 Datasheet (PDF)

 ..1. Size:611K  way-on
 wmb58n03t1.pdf

WMB58N03T1 WMB58N03T1

WMB58N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB58N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and Gsss ssyet maintain superior switching performance. s GFeatures PDFN5060-8L V = 30V, I = 58A DS DR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top