WMB58N03T1 Specs and Replacement
Type Designator: WMB58N03T1
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 170 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: PDFN5060-8L
WMB58N03T1 substitution
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WMB58N03T1 datasheet
wmb58n03t1.pdf
WMB58N03T1 30V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB58N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and G s ss ss yet maintain superior switching performance. s G Features PDFN5060-8L V = 30V, I = 58A DS D R ... See More ⇒
Detailed specifications: WMB35P06TS, WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1, IRFB7545, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1
Keywords - WMB58N03T1 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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