All MOSFET. WMB58N03T1 Datasheet

 

WMB58N03T1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB58N03T1
   Marking Code: B58N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.5 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: PDFN5060-8L

 WMB58N03T1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB58N03T1 Datasheet (PDF)

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 wmb58n03t1.pdf

WMB58N03T1 WMB58N03T1

WMB58N03T1 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DD DD DWMB58N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and Gsss ssyet maintain superior switching performance. s GFeatures PDFN5060-8L V = 30V, I = 58A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MCH6344

 

 
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