WMB60P02TS MOSFET Datasheet: P-Ch, 20V, 60A. Full specification with pinout and replacement list

WMB60P02TS Specs and Replacement

Type Designator: WMB60P02TS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20.2 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm

Package: PDFN5060-8L

WMB60P02TS substitution

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WMB60P02TS datasheet

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WMB60P02TS 20V P-Channel Enhancement Mode Power MOSFET Description WMB60P02TS uses advanced power trench technology that has D D D D D D D D been especially tailored to minimize the on-state resistance and yet G maintain superior switching performance. ss s ss G s Features PDFN5060-8L V = -20V, I = -60A DS D R ... See More ⇒

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WMB60P03TA 30V P-Channel Enhancement Mode Power MOSFET Description WMB60P03TA uses advanced power trench technology that has D D D D DD been especially tailored to minimize the on-state resistance and D D yet maintain superior switching performance. G ss ss s G s Features V = -30V, I = -60A DS D PDFN5060-8L R ... See More ⇒

Detailed specifications: WMB40N04TS, WMB46N03T1, WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1, WMB58N03T1, AON7403, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS