All MOSFET. WMB60P02TS Datasheet

 

WMB60P02TS Datasheet and Replacement


   Type Designator: WMB60P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: PDFN5060-8L
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WMB60P02TS Datasheet (PDF)

 ..1. Size:617K  way-on
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WMB60P02TS

WMB60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P02TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -20V, I = -60A DS DR

 7.1. Size:626K  way-on
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WMB60P02TS

WMB60P03TA 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P03TA uses advanced power trench technology that has D DDD DDbeen especially tailored to minimize the on-state resistance and D Dyet maintain superior switching performance. Gssss sGsFeatures V = -30V, I = -60A DS DPDFN5060-8LR

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS9620S | IRFI7536G | WMM11N80M3

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