All MOSFET. WMB60P02TS Datasheet

 

WMB60P02TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB60P02TS
   Marking Code: B60P02S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 41.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 43 nC
   trⓘ - Rise Time: 20.2 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: PDFN5060-8L

 WMB60P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB60P02TS Datasheet (PDF)

 ..1. Size:617K  way-on
 wmb60p02ts.pdf

WMB60P02TS WMB60P02TS

WMB60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P02TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -20V, I = -60A DS DR

 7.1. Size:626K  way-on
 wmb60p03ta.pdf

WMB60P02TS WMB60P02TS

WMB60P03TA 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P03TA uses advanced power trench technology that has D DDD DDbeen especially tailored to minimize the on-state resistance and D Dyet maintain superior switching performance. Gssss sGsFeatures V = -30V, I = -60A DS DPDFN5060-8LR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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