STK801 Specs and Replacement
Type Designator: STK801
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Electrical Characteristics
Cossⓘ - Output Capacitance: 18 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: SOT89
STK801 substitution
- MOSFET ⓘ Cross-Reference Search
STK801 datasheet
stk801.pdf
Green Product STK801 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Max VDSS ID Rugged and reliable. 1.2 @ VGS=10V Suface Mount Package. 80V 0.6A 1.5 @ VGS=4.5V ESD Protected. D D G S D SOT-89 G S ABSOLUTE MAXIMUM RATINGS (TA=25 C unless... See More ⇒
stk800.pdf
STK800 N-channel 30V - 0.006 - 20A - PolarPAK STripFET Power MOSFET Features VDSS RDS(on) RDS(on)*Qg PTOT Type STK800 30V ... See More ⇒
Detailed specifications: FDP8447L, FDP8860, STM102D, FDP8870, STM101N, FDP8870F085, STK900, FDP8874, 20N50, FDP8876, STK600, FDP8880, STK400, FDP8896, STK103, FDP8N50NZ, FDPF10N50FT
Keywords - STK801 MOSFET specs
STK801 cross reference
STK801 equivalent finder
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STK801 substitution
STK801 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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