All MOSFET. WMB60P03TA Datasheet

 

WMB60P03TA Datasheet and Replacement


   Type Designator: WMB60P03TA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 465 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PDFN5060-8L
 

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WMB60P03TA Datasheet (PDF)

 ..1. Size:626K  way-on
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WMB60P03TA

WMB60P03TA 30V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P03TA uses advanced power trench technology that has D DDD DDbeen especially tailored to minimize the on-state resistance and D Dyet maintain superior switching performance. Gssss sGsFeatures V = -30V, I = -60A DS DPDFN5060-8LR

 7.1. Size:617K  way-on
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WMB60P03TA

WMB60P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionWMB60P02TS uses advanced power trench technology that has D DDDDDD Dbeen especially tailored to minimize the on-state resistance and yet Gmaintain superior switching performance. sssssGsFeatures PDFN5060-8L V = -20V, I = -60A DS DR

Datasheet: WMB46N03T1 , WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , IRFZ48N , WMB690N15HG2 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS .

History: SIF5N40D | MS10N80

Keywords - WMB60P03TA MOSFET datasheet

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