All MOSFET. WMB690N15HG2 Datasheet

 

WMB690N15HG2 Datasheet and Replacement


   Type Designator: WMB690N15HG2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: PDFN5060-8L
 
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WMB690N15HG2 Datasheet (PDF)

 ..1. Size:472K  way-on
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WMB690N15HG2

WMB690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the GsssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: WMB50P03TS , WMB50P04TS , WMB510N15HG2 , WMB52N03T2 , WMB56N04T1 , WMB58N03T1 , WMB60P02TS , WMB60P03TA , 2SK3918 , WMB70N04T1 , WMB70P02TS , WMB80N06TS , WMB80P04TS , WMB81N03T1 , WMB90N02TS , WMB90P03TS , WMB90P04TS .

History: OM3N100ST

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