All MOSFET. WMB690N15HG2 Datasheet

 

WMB690N15HG2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB690N15HG2
   Marking Code: B690N15H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.8 nC
   trⓘ - Rise Time: 3.8 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
   Package: PDFN5060-8L

 WMB690N15HG2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB690N15HG2 Datasheet (PDF)

 ..1. Size:472K  way-on
 wmb690n15hg2.pdf

WMB690N15HG2 WMB690N15HG2

WMB690N15HG2 150V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the GsssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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