WMB690N15HG2 Specs and Replacement
Type Designator: WMB690N15HG2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 59.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 45 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.069 Ohm
Package: PDFN5060-8L
WMB690N15HG2 substitution
- MOSFET ⓘ Cross-Reference Search
WMB690N15HG2 datasheet
wmb690n15hg2.pdf
WMB690N15HG2 150V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB690N15HG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the G ss s ss G s on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50... See More ⇒
Detailed specifications: WMB50P03TS, WMB50P04TS, WMB510N15HG2, WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA, EMB04N03H, WMB70N04T1, WMB70P02TS, WMB80N06TS, WMB80P04TS, WMB81N03T1, WMB90N02TS, WMB90P03TS, WMB90P04TS
Keywords - WMB690N15HG2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AGM16N65F | IRL531
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