All MOSFET. WMB70P02TS Datasheet

 

WMB70P02TS MOSFET. Datasheet pdf. Equivalent


   Type Designator: WMB70P02TS
   Marking Code: B70P02S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 43.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PDFN5060-8L

 WMB70P02TS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WMB70P02TS Datasheet (PDF)

 ..1. Size:609K  way-on
 wmb70p02ts.pdf

WMB70P02TS WMB70P02TS

WMB70P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB70P02TS uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = -20V, I = -70A DS DR

 9.1. Size:974K  way-on
 wmb70n04t1.pdf

WMB70P02TS WMB70P02TS

WMB70N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DWMB70N04T1 uses advanced power trench technology that has D DDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 40V, I = 70A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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