All MOSFET. WMB70P02TS Datasheet

 

WMB70P02TS Datasheet and Replacement


   Type Designator: WMB70P02TS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 43.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
   Package: PDFN5060-8L
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WMB70P02TS Datasheet (PDF)

 ..1. Size:609K  way-on
 wmb70p02ts.pdf pdf_icon

WMB70P02TS

WMB70P02TS 20V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB70P02TS uses advanced power trench technology that has DDD Dbeen especially tailored to minimize the on-state resistance and yet Gsssmaintain superior switching performance. ssGsFeatures PDFN5060-8L V = -20V, I = -70A DS DR

 9.1. Size:974K  way-on
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WMB70P02TS

WMB70N04T1 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DD DWMB70N04T1 uses advanced power trench technology that has D DDDbeen especially tailored to minimize the on-state resistance and Gyet maintain superior switching performance. ssss sGsFeatures PDFN5060-8L V = 40V, I = 70A DS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HFH20N50 | OSG65R130HT3ZF | NTMS4920N | IRL3705ZLPBF | ZXMP3A16N8TA | SPU07N60C3 | IXTP96P085T

Keywords - WMB70P02TS MOSFET datasheet

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