All MOSFET. WMB80N06TS Datasheet

 

WMB80N06TS Datasheet and Replacement


   Type Designator: WMB80N06TS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 95 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 9.6 nS
   Cossⓘ - Output Capacitance: 235 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: PDFN5060-8L
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WMB80N06TS Datasheet (PDF)

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WMB80N06TS

WMB80N06TS 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80N06TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance. Features PDFN5060-8L V = 60V, I = 80A DS DR

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WMB80N06TS

WMB80P04TS 40V P-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB80P04TS uses advanced power trench technology that has Gbeen especially tailored to minimize the on-state resistance and yet sssssGsmaintain superior switching performance.Features PDFN5060-8L V = -40V, I = -80A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXTA1N100 | IRFB3004GPBF | BRCS200P03DP | ZXMN6A07F | TPCP8001-H | TSM4424CS | LKK47-06C5

Keywords - WMB80N06TS MOSFET datasheet

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