WMB80N06TS MOSFET Datasheet: N-Ch, 60V, 80A. Full specification with pinout and replacement list

WMB80N06TS Specs and Replacement

Type Designator: WMB80N06TS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 95 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.6 nS

Cossⓘ - Output Capacitance: 235 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: PDFN5060-8L

WMB80N06TS substitution

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WMB80N06TS datasheet

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WMB80N06TS 60V N-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB80N06TS uses advanced power trench technology that has G been especially tailored to minimize the on-state resistance and yet ss s ss G s maintain superior switching performance. Features PDFN5060-8L V = 60V, I = 80A DS D R ... See More ⇒

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WMB80P04TS 40V P-Channel Enhancement Mode Power MOSFET Description D D D D D D D D WMB80P04TS uses advanced power trench technology that has G been especially tailored to minimize the on-state resistance and yet ss s ss G s maintain superior switching performance. Features PDFN5060-8L V = -40V, I = -80A DS D R ... See More ⇒

Detailed specifications: WMB52N03T2, WMB56N04T1, WMB58N03T1, WMB60P02TS, WMB60P03TA, WMB690N15HG2, WMB70N04T1, WMB70P02TS, AOD4184A, WMB80P04TS, WMB81N03T1, WMB90N02TS, WMB90P03TS, WMB90P04TS, WMB95P06TS, WMC1N40D1, WMF05N70MM